IRF7101
International Rectifier
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Power mosfet. HEXFET® Power MOSFET S1 1 G1 2 S2 3 G2 4 8 D1 7 D1 6 D2 5 D2 Top View VDSS = 20V RDS(on) = 0.10Ω ID = 3.5A Fourth
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IRF710 - N-Channel Power MOSFET
(Intersil Corporation)
IRF710
Data Sheet June 1999 File Number
2310.3
2.0A, 400V, 3.600 Ohm, N-Channel Power MOSFET
This N-Channel enhancement mode silicon gate power field .
IRF710 - N-Channel MOSFET
(INCHANGE)
isc N-Channel Mosfet Transistor
·FEATURES ·Low RDS(on) ·VGS Rated at ±20V ·Silicon Gate for Fast Switching Speed ·Rugged ·Low Drive Requirements ·Min.
IRF710 - N-Channel MOSFET
(ART CHIP)
IRF710-713 / MTP2N35 / 2N40
N-Channel Power MOSFETs, 2.25 A, 350-400V
Description
These devices are n-channel, enhancement mode, power MOSFETs design.
IRF710 - Power MOSFET
(Vishay)
.vishay.
IRF710
Vishay Siliconix
Power MOSFET
D TO-220AB
S D G
G
S N-Channel MOSFET
PRODUCT SUMMARY
VDS (V) RDS(on) (Ω) Qg max. (nC) Qgs .
IRF7101PBF - Power MOSFET
(International Rectifier)
PD - 95162
IRF7101PbF
l Adavanced Process Technology l Ultra Low On-Resistance l Dual N-Channel MOSFET l Surface Mount l Available in Tape & Reel l D.
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IRF7103 - Power MOSFET
(International Rectifier)
PD - 9.1095B
IRF7103
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l l l l l l l
Adavanced Process Technology Ultra Low On-Resistance Dual N-Channel MOSFET Surface Mount Ava.
IRF7103PBF - Power MOSFET
(International Rectifier)
PD -95037B
IRF7103PbF
l Adavanced Process Technology l Ultra Low On-Resistance l Dual N-Channel MOSFET l Surface Mount l Available in Tape & Reel l D.
IRF7103Q - Power MOSFET
(International Rectifier)
PD - 93944C
AUTOMOTIVE MOSFET
Typical Applications
q q q
IRF7103Q
HEXFET® Power MOSFET
Anti-lock Braking Systems (ABS) Electronic Fuel Injection Po.
IRF7103QPbF - Power MOSFET
(International Rectifier)
PD - 96101C
IRF7103QPbF
Benefits l Advanced Process Technology l Dual N-Channel MOSFET l Ultra Low On-Resistance l 175°C Operating Temperature l Repe.