IRF7101PBF

Power MOSFET

International Rectifier

IRF7101PBF General Description

HEXFET® Power MOSFET S1 1 G1 2 S2 3 G2 4 8 D1 7 D1 6 D2 5 D2 Top View VDSS = 20V RDS(on) = 0.10Ω ID = 3.5A Fourth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, co.

IRF7101PBF Datasheet (284.15 KB)

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IRF7101PBF

Manufacturer:

International Rectifier

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284.15 KB

Description:

Power mosfet.
PD - 95162 IRF7101PbF l Adavanced Process Technology l Ultra Low On-Resistance l Dual N-Channel MOSFET l Surface Mount l Available in Tape & Reel l D.

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IRF7101PBF Power MOSFET International Rectifier

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IRF7101PBF General Description

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