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IRF710 - N-Channel Power MOSFET

IRF710 Description

IRF710 Data Sheet June 1999 File Number 2310.3 2.0A, 400V, 3.600 Ohm, N-Channel Power MOSFET This N-Channel enhancement mode silicon gate power field .

IRF710 Features

* 2.0A, 400V
* rDS(ON) = 3.600Ω
* Single Pulse Avalanche Energy Rated
* SOA is Power Dissipation Limited
* Nanosecond Switching Speeds
* Linear Transfer Characteristics
* High Input Impedance
* Related Literature - TB334 “Guidelines for

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Datasheet Details

Part number
IRF710
Manufacturer
Intersil Corporation
File Size
56.15 KB
Datasheet
IRF710_IntersilCorporation.pdf
Description
N-Channel Power MOSFET

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N-Channel Power MOSFET Intersil Corporation
Intersil Corporation IRF710-like datasheet