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IRF7104 HEXFET Power MOSFET

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Description

PD - 9.1096B IRF7104 HEXFET® Power MOSFET Adavanced Process Technology Ultra Low On-Resistance l Dual P-Channel MOSFET l Surface Mount l Available in.
l l S1 G1 S2 G2 1 8 7 D1 D1 D2 D2 2 VDSS = -20V RDS(on) = 0.

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Datasheet Specifications

Part number
IRF7104
Manufacturer
International Rectifier
File Size
158.94 KB
Datasheet
IRF7104_InternationalRectifier.pdf
Description
HEXFET Power MOSFET

Features

* oshima-Ku, Tokyo Japan 171 Tel: 81 3 3983 0086 IR SOUTHEAST ASIA: 315 Outram Road, #10-02 Tan Boon Liat Building, Singapore 0316 Tel: 65 221 8371 http://www. irf. com/ Data and specifications subject to change without notice. 8/97

Applications

* The SO-8 has been modified through a customized leadframe for enhanced thermal characteristics and dual-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board space. The package is de

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