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INCHANGE Semiconductor
isc N-Channel Mosfet Transistor
isc Product Specification
IRF710A
·FEATURES ·Avalanche Rugged Technology ·Lower Input Capacitance ·Improved Gate Charge ·Extended Safe Operating Area ·Low RDS(ON) : 2.815 Ω (Typ.)
·DESCRITION ·designed for applications such as switching regulators, switching convertors, motor drivers,relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits.
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VDSS VGS ID IDM PD Tj Tstg
Drain-Source Voltage
400 V
Gate-Source Voltage-Continuous
±30
V
Drain Current-Continuous
2A
Drain Current-Single Plused
6A
Total Dissipation @TC=25℃ Max.
IRF710A Datasheet
