* of these HEXFET Power MOSFET's are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These benefits combine to make this design an extremely efficient and reliable device for use in a wide variety of applications. VDSS 50V HEXFET® Power MOSFET
IRF7103QPbF Datasheet (251.15 KB)
IRF7103QPbF
International Rectifier
251.15 KB
Power mosfet.
PD - 96101C
IRF7103QPbF
Benefits l Advanced Process Technology l Dual N-Channel MOSFET l Ultra Low On-Resistance l 175°C Operating Temperature l Repe.
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