IRF7103QPbF Datasheet, Mosfet, International Rectifier

IRF7103QPbF Features

• Mosfet of these HEXFET Power MOSFET's are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These benefits combine to make this design an e

PDF File Details

Part number:

IRF7103QPbF

Manufacturer:

International Rectifier

File Size:

251.15kb

Download:

📄 Datasheet

Description:

Power mosfet. This HEXFET® Power MOSFET's in a Dual SO-8 package utilize the lastest processing techniques to achieve extremely low on-resistance p

IRF7103QPbF Application

• Applications VDSS 50V HEXFET® Power MOSFET RDS(on) max (mW) 130@VGS = 10V 200@VGS = 4.5V ID 3.0A 1.5A S1 1 G1 2 S2 3 G2 4 8 D1 7 D1 6 D2 5 D2

TAGS

📁 Related Datasheet

IRF7103Q - Power MOSFET (International Rectifier)
PD - 93944C AUTOMOTIVE MOSFET Typical Applications q q q IRF7103Q HEXFET® Power MOSFET Anti-lock Braking Systems (ABS) Electronic Fuel Injection Po.

IRF7103 - Power MOSFET (International Rectifier)
PD - 9.1095B IRF7103 HEXFET® Power MOSFET l l l l l l l Adavanced Process Technology Ultra Low On-Resistance Dual N-Channel MOSFET Surface Mount Ava.

IRF7103PBF - Power MOSFET (International Rectifier)
PD -95037B IRF7103PbF l Adavanced Process Technology l Ultra Low On-Resistance l Dual N-Channel MOSFET l Surface Mount l Available in Tape & Reel l D.

IRF710 - N-Channel Power MOSFET (Intersil Corporation)
IRF710 Data Sheet June 1999 File Number 2310.3 2.0A, 400V, 3.600 Ohm, N-Channel Power MOSFET This N-Channel enhancement mode silicon gate power field .

IRF710 - N-Channel MOSFET (INCHANGE)
isc N-Channel Mosfet Transistor ·FEATURES ·Low RDS(on) ·VGS Rated at ±20V ·Silicon Gate for Fast Switching Speed ·Rugged ·Low Drive Requirements ·Min.

IRF710 - N-Channel MOSFET (ART CHIP)
IRF710-713 / MTP2N35 / 2N40 N-Channel Power MOSFETs, 2.25 A, 350-400V Description These devices are n-channel, enhancement mode, power MOSFETs design.

IRF710 - Power MOSFET (Vishay)
.vishay. IRF710 Vishay Siliconix Power MOSFET D TO-220AB S D G G S N-Channel MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg max. (nC) Qgs .

IRF7101 - Power MOSFET (International Rectifier)
PD - 95162 IRF7101PbF l Adavanced Process Technology l Ultra Low On-Resistance l Dual N-Channel MOSFET l Surface Mount l Available in Tape & Reel l D.

IRF7101PBF - Power MOSFET (International Rectifier)
PD - 95162 IRF7101PbF l Adavanced Process Technology l Ultra Low On-Resistance l Dual N-Channel MOSFET l Surface Mount l Available in Tape & Reel l D.

IRF7102 - Power MOSFET (International Rectifier)
.