IRF7103QPbF Datasheet - International Rectifier

IRF7103QPbF, Power MOSFET

PD - 96101C IRF7103QPbF Benefits l Advanced Process Technology l Dual N-Channel MOSFET l Ultra Low On-Resistance l 175°C Operating Temperature l Repe.
This HEXFET® Power MOSFET's in a Dual SO-8 package utilize the lastest processing techniques to achieve extremely low on-resistance per silicon area.

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IRF7103QPbF-InternationalRectifier.pdf

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Datasheet Details

Part number:

IRF7103QPbF

Manufacturer:

International Rectifier

File Size:

251.15 KB

Description:

Power MOSFET

Applications

* VDSS 50V HEXFET® Power MOSFET RDS(on) max (mW) 130@VGS = 10V 200@VGS = 4.5V ID 3.0A 1.5A S1 1 G1 2 S2 3 G2 4 8 D1 7 D1 6 D2 5 D2 Top View SO-8 The efficient SO-8 package provides enhanced thermal characteristics and dual MOSFET die capability making it ideal in a variety of power applicati

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IRF7103QPbF Power MOSFET International Rectifier

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