Datasheet4U Logo Datasheet4U.com

IRF123 Datasheet - Intersil Corporation

IRF123 N-Channel Power MOSFET

These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as swi.

IRF123 Features

* 8.0A and 9.2A, 80V and 100V

* rDS(ON) = 0.27Ω and 0.36Ω

* SOA is Power Dissipation Limited

* Nanosecond Switching Speeds

* Linear Transfer Characteristics

* High Input Impedance

* Majority Carrier Device

* Related Literature - TB334 “

IRF123 Datasheet (68.22 KB)

Preview of IRF123 PDF
IRF123 Datasheet Preview Page 2 IRF123 Datasheet Preview Page 3

Datasheet Details

Part number:

IRF123

Manufacturer:

Intersil Corporation

File Size:

68.22 KB

Description:

N-channel power mosfet.

📁 Related Datasheet

IRF120 N-CHANNEL POWER MOSFET (Samsung semiconductor)

IRF120 Power MOSFET (Intersil Corporation)

IRF120 N-Channel Power MOSFET (Fairchild Semiconductor)

IRF120 N-Channel MOSFET Transistor (Inchange Semiconductor)

IRF1205 HEXFET Power MOSFET (International Rectifier)

IRF121 N-Channel Power MOSFET (Fairchild Semiconductor)

IRF121 N-Channel Power MOSFET (Samsung semiconductor)

IRF121 N-Channel Power MOSFET (Intersil Corporation)

TAGS

IRF123 N-Channel Power MOSFET Intersil Corporation

IRF123 Distributor