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IRF123

N-Channel Power MOSFET

IRF123 Features

* 8.0A and 9.2A, 80V and 100V

* rDS(ON) = 0.27Ω and 0.36Ω

* SOA is Power Dissipation Limited

* Nanosecond Switching Speeds

* Linear Transfer Characteristics

* High Input Impedance

* Majority Carrier Device

* Related Literature - TB334 “

IRF123 General Description

These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as swi.

IRF123 Datasheet (68.22 KB)

Preview of IRF123 PDF

Datasheet Details

Part number:

IRF123

Manufacturer:

Intersil Corporation

File Size:

68.22 KB

Description:

N-channel power mosfet.

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IRF123 N-Channel Power MOSFET Intersil Corporation

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