IRF123 N-Channel Power MOSFET

Intersil Corporation

Description

Semiconductor IRF120, IRF121, IRF122, IRF123 8.0A and 9.2A, 80V and 100V, 0.27 and 0.36 Ohm, N-Channel, Power MOSFETs .
These are N-Channel enhancement mode silicon gate power ﬁeld effect transistors.

📥 Download Datasheet

IRF123 Datasheet Preview — Preview of IRF123 PDF

Datasheet Specifications

Part number: IRF123
Manufacturer: Intersil Corporation
File Size: 68.22 KB
Datasheet: IRF123_IntersilCorporation.pdf
Description: N-Channel Power MOSFET

Features

* 8.0A and 9.2A, 80V and 100V
* rDS(ON) = 0.27Ω and 0.36Ω
* SOA is Power Dissipation Limited
* Nanosecond Switching Speeds
* Linear Transfer Characteristics
* High Input Impedance
* Majority Carrier Device
* Related Literature - TB334 “

Applications

* such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits. Formerly developmental type TA09594. October 1997

IRF123 Distributors

📁 Related Datasheet

IRF120 IRF1205 IRF121 IRF122 IRF100 IRF100B201

📌 All Tags

IRF123 N-Channel Power MOSFET Intersil Corporation

Intersil Corporation IRF123-like datasheet