Datasheet Details
Part number:
IRF130
Manufacturer:
Intersil Corporation
File Size:
56.57 KB
Description:
N-Channel Power MOSFET
Features
* 14A, 100V
* rDS(ON) = 0.160Ω
* Single Pulse Avalanche Energy Rated
* SOA is Power Dissipation Limited
* Nanosecond Switching Speeds
* Linear Transfer Characteristics
* High Input Impedance
* Related Literature - TB334 “Guidelines for
IRF130_IntersilCorporation.pdf
IRF130, N-Channel Power MOSFET
IRF130 Data Sheet March 1999 File Number 1566.4 14A, 100V, 0.160 Ohm, N-Channel Power MOSFET This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation.
All of these power MOSFETs are designed for applications such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high power bipolar switching t
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