IRF122 N-Channel Power MOSFET

Intersil Corporation

Description

Semiconductor IRF120, IRF121, IRF122, IRF123 8.0A and 9.2A, 80V and 100V, 0.27 and 0.36 Ohm, N-Channel, Power MOSFETs .
These are N-Channel enhancement mode silicon gate power ﬁeld effect transistors.

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Datasheet Specifications

Part number: IRF122
Manufacturer: Intersil Corporation
File Size: 68.22 KB
Datasheet: IRF122_IntersilCorporation.pdf
Description: N-Channel Power MOSFET

Features

* 8.0A and 9.2A, 80V and 100V
* rDS(ON) = 0.27Ω and 0.36Ω
* SOA is Power Dissipation Limited
* Nanosecond Switching Speeds
* Linear Transfer Characteristics
* High Input Impedance
* Majority Carrier Device
* Related Literature - TB334 “

Applications

* such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits. Formerly developmental type TA09594. October 1997

IRF122 Distributors

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IRF122 N-Channel Power MOSFET Intersil Corporation

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