IRF222 N-Channel Power MOSFET

Intersil Corporation

Description

Semiconductor IRF220, IRF221, IRF222, IRF223 4.0A and 5.0A, 150V and 200V, 0.8 and 1.2 Ohm, N-Channel Power MOSFETs .
These are N-Channel enhancement mode silicon gate power ﬁeld effect transistors.

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Datasheet Specifications

Part number: IRF222
Manufacturer: Intersil Corporation
File Size: 68.87 KB
Datasheet: IRF222_IntersilCorporation.pdf
Description: N-Channel Power MOSFET

Features

* 4.0A and 5.0A, 150V and 200V
* rDS(ON) = 0.8Ω and 1.2Ω
* SOA is Power Dissipation Limited
* Nanosecond Switching Speeds
* Linear Transfer Characteristics
* High Input Impedance
* Majority Carrier Device
* Related Literature - TB334 “G

Applications

* such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits. Formerly developmental type TA09600. October 1997

IRF222 Distributors

📁 Related Datasheet

IRF220 IRF2204 IRF2204L IRF2204PBF IRF2204S IRF221

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IRF222 N-Channel Power MOSFET Intersil Corporation

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