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IRF222

N-Channel Power MOSFET

IRF222 Features

* 4.0A and 5.0A, 150V and 200V

* rDS(ON) = 0.8Ω and 1.2Ω

* SOA is Power Dissipation Limited

* Nanosecond Switching Speeds

* Linear Transfer Characteristics

* High Input Impedance

* Majority Carrier Device

* Related Literature - TB334 “G

IRF222 General Description

These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as swi.

IRF222 Datasheet (68.87 KB)

Preview of IRF222 PDF

Datasheet Details

Part number:

IRF222

Manufacturer:

Intersil Corporation

File Size:

68.87 KB

Description:

N-channel power mosfet.

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TAGS

IRF222 N-Channel Power MOSFET Intersil Corporation

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