IRF230 Datasheet - Intersil Corporation

IRF230 N-Channel Power MOSFET

These are N-Channel enhancement mode silicon gate power ﬁeld effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a speciﬁed level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as swi.

IRF230 Features

* 8.0A and 9.0A, 150V and 200V

* rDS(ON) = 0.4Ω and 0.6Ω

* Single Pulse Avalanche Energy Rated

* SOA is Power Dissipation Limited

* Nanosecond Switching Speeds

* Linear Transfer Characteristics

* High Input Impedance

* Related Literatur

IRF230_IntersilCorporation.pdf

IRF230 Datasheet Preview — Preview of IRF230 PDF

Datasheet Details

Part number:

IRF230

Manufacturer:

Intersil Corporation

File Size:

69.66 KB

Description:

N-channel power mosfet.

📁 Related Datasheet

IRF230 N-Channel Power MOSFET (Samsung semiconductor)

IRF230 N-Channel Power MOSFET (Seme LAB)

IRF230 N-Channel Power MOSFET (Fairchild Semiconductor)

IRF230 N-Channel MOSFET Transistor (Inchange Semiconductor)

IRF230 N-CHANNEL TRANSISTORS (International Rectifier)

IRF231 N-Channel Power MOSFET (Fairchild Semiconductor)

IRF231 N-Channel Power MOSFET (Samsung semiconductor)

IRF231 N-Channel Power MOSFET (Intersil Corporation)

TAGS

IRF230 IRF230 N-Channel Power MOSFET Intersil Corporation

IRF230 Distributor