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IRF234

N-Channel Power MOSFET

IRF234 Features

* 8.1A and 6.5A, 275V and 250V

* rDS(ON) = 0.45Ω and 0.68Ω

* Single Pulse Avalanche Energy Rated

* SOA is Power Dissipation Limited

* Nanosecond Switching Speeds

* Linear Transfer Characteristics

* High Input Impedance

* 275V, 250V DC R

IRF234 General Description

These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as swi.

IRF234 Datasheet (69.15 KB)

Preview of IRF234 PDF

Datasheet Details

Part number:

IRF234

Manufacturer:

Intersil Corporation

File Size:

69.15 KB

Description:

N-channel power mosfet.

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IRF234 N-Channel Power MOSFET Intersil Corporation

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