IRF235

N-Channel Power MOSFET

Intersil Corporation

IRF235 Features

* 8.1A and 6.5A, 275V and 250V

* rDS(ON) = 0.45Ω and 0.68Ω

* Single Pulse Avalanche Energy Rated

* SOA is Power Dissipation Limited

* Nanosecond Switching Speeds

* Linear Transfer Characteristics

* High Input Impedance

* 275V, 250V DC R

IRF235 General Description

These are N-Channel enhancement mode silicon gate power ﬁeld effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a speciﬁed level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as swi.

IRF235 Datasheet (69.15 KB)

IRF235 Datasheet Preview — Preview of IRF235 PDF

Datasheet Details

Part number:

IRF235

Manufacturer:

Intersil Corporation

File Size:

69.15 KB

Description:

N-channel power mosfet.

📁 Related Datasheet

IRF230 N-Channel Power MOSFET (Samsung semiconductor)

IRF230 N-Channel Power MOSFET (Seme LAB)

IRF230 N-Channel Power MOSFET (Intersil Corporation)

IRF230 N-Channel Power MOSFET (Fairchild Semiconductor)

IRF230 N-Channel MOSFET Transistor (Inchange Semiconductor)

IRF230 N-CHANNEL TRANSISTORS (International Rectifier)

IRF231 N-Channel Power MOSFET (Fairchild Semiconductor)

IRF231 N-Channel Power MOSFET (Samsung semiconductor)

IRF231 N-Channel Power MOSFET (Intersil Corporation)

IRF231 N-Channel MOSFET Transistor (Inchange Semiconductor)

TAGS

IRF235 N-Channel Power MOSFET Intersil Corporation

Image Gallery

IRF235 Features

IRF235 General Description

Datasheet Details

File Size:

Description:

IRF235 Distributor