IRF236 Datasheet - Intersil Corporation

IRF236 N-Channel Power MOSFET

These are N-Channel enhancement mode silicon gate power ﬁeld effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a speciﬁed level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as swi.

IRF236 Features

* 8.1A and 6.5A, 275V and 250V

* rDS(ON) = 0.45Ω and 0.68Ω

* Single Pulse Avalanche Energy Rated

* SOA is Power Dissipation Limited

* Nanosecond Switching Speeds

* Linear Transfer Characteristics

* High Input Impedance

* 275V, 250V DC R

IRF236 Datasheet (69.15 KB)

IRF236 Datasheet Preview — Preview of IRF236 PDF

Datasheet Details

Part number:

IRF236

Manufacturer:

Intersil Corporation

File Size:

69.15 KB

Description:

N-channel power mosfet.

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IRF236 N-Channel Power MOSFET Intersil Corporation

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