Datasheet4U Logo Datasheet4U.com

IRF236

N-Channel Power MOSFET

IRF236 Features

* 8.1A and 6.5A, 275V and 250V

* rDS(ON) = 0.45Ω and 0.68Ω

* Single Pulse Avalanche Energy Rated

* SOA is Power Dissipation Limited

* Nanosecond Switching Speeds

* Linear Transfer Characteristics

* High Input Impedance

* 275V, 250V DC R

IRF236 General Description

These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as swi.

IRF236 Datasheet (69.15 KB)

Preview of IRF236 PDF

Datasheet Details

Part number:

IRF236

Manufacturer:

Intersil Corporation

File Size:

69.15 KB

Description:

N-channel power mosfet.

📁 Related Datasheet

IRF230 N-Channel Power MOSFET (Samsung semiconductor)

IRF230 N-Channel Power MOSFET (Seme LAB)

IRF230 N-Channel Power MOSFET (Intersil Corporation)

IRF230 N-Channel Power MOSFET (Fairchild Semiconductor)

IRF230 N-Channel MOSFET Transistor (Inchange Semiconductor)

IRF230 N-CHANNEL TRANSISTORS (International Rectifier)

IRF231 N-Channel Power MOSFET (Fairchild Semiconductor)

IRF231 N-Channel Power MOSFET (Samsung semiconductor)

IRF231 N-Channel Power MOSFET (Intersil Corporation)

IRF231 N-Channel MOSFET Transistor (Inchange Semiconductor)

TAGS

IRF236 N-Channel Power MOSFET Intersil Corporation

Image Gallery

IRF236 Datasheet Preview Page 2 IRF236 Datasheet Preview Page 3

IRF236 Distributor