IRF236 Datasheet - Intersil Corporation

IRF236, N-Channel Power MOSFET

Semiconductor IRF234, IRF235, IRF236, IRF237 8.1A and 6.5A, 275V and 250V, 0.45 and 0.68 Ohm, N-Channel Power MOSFETs .
These are N-Channel enhancement mode silicon gate power ﬁeld effect transistors.

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Datasheet Details

Part number:

IRF236

Manufacturer:

Intersil Corporation

File Size:

69.15 KB

Description:

N-Channel Power MOSFET

Features

* 8.1A and 6.5A, 275V and 250V
* rDS(ON) = 0.45Ω and 0.68Ω
* Single Pulse Avalanche Energy Rated
* SOA is Power Dissipation Limited
* Nanosecond Switching Speeds
* Linear Transfer Characteristics
* High Input Impedance
* 275V, 250V DC R

Applications

* such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits. Formerly developmental type TA17413. January 1998

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IRF236 N-Channel Power MOSFET Intersil Corporation

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