Datasheet Details
Part number:
IRF237
Manufacturer:
Intersil Corporation
File Size:
69.15 KB
Description:
N-Channel Power MOSFET
Features
* 8.1A and 6.5A, 275V and 250V
* rDS(ON) = 0.45Ω and 0.68Ω
* Single Pulse Avalanche Energy Rated
* SOA is Power Dissipation Limited
* Nanosecond Switching Speeds
* Linear Transfer Characteristics
* High Input Impedance
* 275V, 250V DC R
IRF237_IntersilCorporation.pdf
IRF237, N-Channel Power MOSFET
These are N-Channel enhancement mode silicon gate power field effect transistors.
They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation.
All of these power MOSFETs are designed for applications such as swi
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