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IRF231

N-Channel Power MOSFET

IRF231 Features

* 8.0A and 9.0A, 150V and 200V

* rDS(ON) = 0.4Ω and 0.6Ω

* Single Pulse Avalanche Energy Rated

* SOA is Power Dissipation Limited

* Nanosecond Switching Speeds

* Linear Transfer Characteristics

* High Input Impedance

* Related Literatur

IRF231 General Description

These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as swi.

IRF231 Datasheet (69.66 KB)

Preview of IRF231 PDF

Datasheet Details

Part number:

IRF231

Manufacturer:

Intersil Corporation

File Size:

69.66 KB

Description:

N-channel power mosfet.

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TAGS

IRF231 N-Channel Power MOSFET Intersil Corporation

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