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IRF233 - N-Channel Power MOSFET

IRF233 Description

Semiconductor IRF230, IRF231, IRF232, IRF233 8.0A and 9.0A, 150V and 200V, 0.4 and 0.6 Ohm, N-Channel Power MOSFETs .
These are N-Channel enhancement mode silicon gate power field effect transistors.

IRF233 Features

* 8.0A and 9.0A, 150V and 200V
* rDS(ON) = 0.4Ω and 0.6Ω
* Single Pulse Avalanche Energy Rated
* SOA is Power Dissipation Limited
* Nanosecond Switching Speeds
* Linear Transfer Characteristics
* High Input Impedance
* Related Literatur

IRF233 Applications

* such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits. Formerly developmental type TA17412. October 1997

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Datasheet Details

Part number
IRF233
Manufacturer
Intersil Corporation
File Size
69.66 KB
Datasheet
IRF233_IntersilCorporation.pdf
Description
N-Channel Power MOSFET

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N-Channel Power MOSFET Intersil Corporation
Intersil Corporation IRF233-like datasheet

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