IRF232 Datasheet (Intersil Corporation)

IRF232, N-Channel Power MOSFET

These are N-Channel enhancement mode silicon gate power ﬁeld effect transistors.

They are advanced power MOSFETs designed, tested, and guaranteed to withstand a speciﬁed level of energy in the breakdown avalanche mode of operation.

All of these power MOSFETs are designed for applications such as swi

IRF232 Features

* 8.0A and 9.0A, 150V and 200V

* rDS(ON) = 0.4Ω and 0.6Ω

* Single Pulse Avalanche Energy Rated

* SOA is Power Dissipation Limited

* Nanosecond Switching Speeds

* Linear Transfer Characteristics

* High Input Impedance

* Related Literatur