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IRF120 Datasheet - Intersil Corporation

IRF120 Power MOSFET

These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as swi.

IRF120 Features

* 8.0A and 9.2A, 80V and 100V

* rDS(ON) = 0.27Ω and 0.36Ω

* SOA is Power Dissipation Limited

* Nanosecond Switching Speeds

* Linear Transfer Characteristics

* High Input Impedance

* Majority Carrier Device

* Related Literature - TB334 “

IRF120_IntersilCorporation.pdf

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Datasheet Details

Part number:

IRF120

Manufacturer:

Intersil Corporation

File Size:

68.22 KB

Description:

Power mosfet.

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IRF120 IRF120 Power MOSFET Intersil Corporation

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