Datasheet Details
- Part number
- IRF120
- Manufacturer
- Intersil Corporation
- File Size
- 68.22 KB
- Datasheet
- IRF120_IntersilCorporation.pdf
- Description
- Power MOSFET
IRF120 Description
Semiconductor IRF120, IRF121, IRF122, IRF123 8.0A and 9.2A, 80V and 100V, 0.27 and 0.36 Ohm, N-Channel, Power MOSFETs .
These are N-Channel enhancement mode silicon gate power field effect transistors.
IRF120 Features
* 8.0A and 9.2A, 80V and 100V
* rDS(ON) = 0.27Ω and 0.36Ω
* SOA is Power Dissipation Limited
* Nanosecond Switching Speeds
* Linear Transfer Characteristics
* High Input Impedance
* Majority Carrier Device
* Related Literature - TB334 “
IRF120 Applications
* such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits. Formerly developmental type TA09594.
October 1997
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