Datasheet Details
Part number:
IRF120
Manufacturer:
Intersil Corporation
File Size:
68.22 KB
Description:
Power MOSFET
Features
* 8.0A and 9.2A, 80V and 100V
* rDS(ON) = 0.27Ω and 0.36Ω
* SOA is Power Dissipation Limited
* Nanosecond Switching Speeds
* Linear Transfer Characteristics
* High Input Impedance
* Majority Carrier Device
* Related Literature - TB334 “
IRF120_IntersilCorporation.pdf
IRF120, Power MOSFET
These are N-Channel enhancement mode silicon gate power field effect transistors.
They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation.
All of these power MOSFETs are designed for applications such as swi
IRF120 Distributor
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