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IRF120

Power MOSFET

IRF120 Features

* 8.0A and 9.2A, 80V and 100V

* rDS(ON) = 0.27Ω and 0.36Ω

* SOA is Power Dissipation Limited

* Nanosecond Switching Speeds

* Linear Transfer Characteristics

* High Input Impedance

* Majority Carrier Device

* Related Literature - TB334 “

IRF120 General Description

These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as swi.

IRF120 Datasheet (68.22 KB)

Preview of IRF120 PDF

Datasheet Details

Part number:

IRF120

Manufacturer:

Intersil Corporation

File Size:

68.22 KB

Description:

Power mosfet.

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IRF120 Power MOSFET Intersil Corporation

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