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IRF121 - N-Channel Power MOSFET

Datasheet Summary

Description

These are N-Channel enhancement mode silicon gate power field effect transistors.

They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation.

Features

  • 8.0A and 9.2A, 80V and 100V.
  • rDS(ON) = 0.27Ω and 0.36Ω.
  • SOA is Power Dissipation Limited.
  • Nanosecond Switching Speeds.
  • Linear Transfer Characteristics.
  • High Input Impedance.
  • Majority Carrier Device.
  • Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards” Ordering Information PART NUMBER IRF120 IRF121 IRF122 IRF123.

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Datasheet Details

Part number IRF121
Manufacturer Intersil Corporation
File Size 68.22 KB
Description N-Channel Power MOSFET
Datasheet download datasheet IRF121 Datasheet
Additional preview pages of the IRF121 datasheet.

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Full PDF Text Transcription

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Semiconductor IRF120, IRF121, IRF122, IRF123 8.0A and 9.2A, 80V and 100V, 0.27 and 0.36 Ohm, N-Channel, Power MOSFETs Description These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits. Formerly developmental type TA09594. October 1997 Features • 8.0A and 9.2A, 80V and 100V • rDS(ON) = 0.27Ω and 0.
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