IRF730 Datasheet - Intersil Corporation

IRF730 N-Channel Power MOSFET

IRF730 Data Sheet July 1999 File Number 1580.5 5.5A, 400V, 1.000 Ohm, N-Channel Power MOSFET This is an N-Channel enhancement mode silicon gate power ﬁeld effect transistor. It is an advanced power MOSFET designed, tested, and guaranteed to withstand a speciﬁed level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high power bipolar s.

IRF730 Features

* 5.5A, 400V

* rDS(ON) = 1.000Ω

* Single Pulse Avalanche Energy Rated

* SOA is Power Dissipation Limited

* Nanosecond Switching Speeds

* Linear Transfer Characteristics

* High Input Impedance

* Related Literature - TB334 “Guidelines for

IRF730 Datasheet (54.27 KB)

IRF730 Datasheet Preview — Preview of IRF730 PDF

Datasheet Details

Part number:

IRF730

Manufacturer:

Intersil Corporation

File Size:

54.27 KB

Description:

N-channel power mosfet.

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IRF730 N-Channel Power MOSFET Intersil Corporation

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