PD -9.1484B IRF9Z24N HEXFET® Power MOSFET Advanc.
International Rectifier
F9Z24N - IRF9Z24N
PD -9.1484B www.DataSheet4U.com IRF9Z24N VDSS = -55V RDS(on) = 0.175Ω HEXFET® Power MOSFET Advanced Process Technology Dynamic dv/dt Rating l 175°C .
International Rectifier
IRF9Z24N - Power MOSFET
PD -9.1484B IRF9Z24N HEXFET® Power MOSFET Advanced Process Technology Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l P-Channel.
International Rectifier
IRF9Z24NPBF - HEXFET Power MOSFET
• Lead-Free PD - 94982 IRF9Z24NPbF www.irf.com 1 02/05/04 IRF9Z24NPbF 2 www.irf.com IRF9Z24NPbF www.irf.com 3 IRF9Z24NPbF 4 www.irf.com I.
International Rectifier
IRF9Z24NSPbF - Power MOSFET
Lead-Free PD- 95770 IRF9Z24NSPbF IRF9Z24NLPBF www.irf.com 1 04/25/05 IRF9Z24NS/LPbF 2 www.irf.com IRF9Z24NS/LPbF www.irf.com 3 IRF9Z24NS/LPb.
International Rectifier
IRF9Z24NL - Power MOSFET
PD - 91742A IRF9Z24NS/L HEXFET® Power MOSFET Advanced Process Technology Surface Mount (IRF9Z24NS) l Low-profile through-hole (IRF9Z24NL) l 175°C Ope.
International Rectifier
IRF9Z24NLPBF - Power MOSFET
Lead-Free PD- 95770 IRF9Z24NSPbF IRF9Z24NLPBF www.irf.com 1 04/25/05 IRF9Z24NS/LPbF 2 www.irf.com IRF9Z24NS/LPbF www.irf.com 3 IRF9Z24NS/LPb.
International Rectifier
IRF9Z24NS - Power MOSFET
l Advanced Process Technology l Surface Mount (IRF9Z24NS) l Low-profile through-hole (IRF9Z24NL) l 175°C Operating Temperature l P-Channel G l F.
VBsemi
IRF9Z24NS - P-Channel MOSFET
IRF9Z24NS IRF9Z24NS Datasheet P-Channel 60 V (D-S) MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) RDS(on) () Max. 0.048at VGS = - 10 V - 60 0.06.