IRFB3207 Datasheet | Specifications & PDF Download

isc N-Channel MOSFET Transistor INCHANGE Semiconductor IRFB3207， IIRFB3207 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤4.5mΩ ·Enhancement

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Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High

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isc N-Channel MOSFET Transistor INCHANGE Semiconductor IRFB3207Z， IIRFB3207Z ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤4.1mΩ ·Enhanceme

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isc N-Channel MOSFET Transistor IRFB3207ZG，IIRFB3207ZG ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤4.1mΩ ·Enhancement mode ·Fast Switchin

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Applications High Efficiency Synchronous Rectification in SMPS Uninterruptible Power Supply High Speed Power Switching G Hard Switched and High

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Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High

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PD - 95708D www.DataSheet4U.com IRFB3207PbF IRFS3207PbF IRFSL3207PbF HEXFET® Power MOSFET D Applications l High Efficiency Synchronous Rectificatio

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AUTOMOTIVE GRADE PD - 96322 HEXFET® Power MOSFET Features l l l l l l l AUIRFB3207 75V 3.6mΩ 4.5mΩ 170A 75A Advanced Process Technology Ultra Low

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