AUIRFB3207 Datasheet | International Rectifier

AUTOMOTIVE GRADE - 96322 HEXFET® Power MOSFET Features l l l l l l l 75V 3.6mΩ 4.5mΩ 170A 75A Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS pliant Automotive Qualified - D V(BR)DSS RDS(on) typ. max. ID (Silicon Limited) ID (Package Limited) G S c Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional Features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive...