AUIRFB8407 Datasheet | International Rectifier

AUTOMOTIVE GRADE AUIRFB8407 AUIRFS8407 AUIRFSL8407 HEXFET® Power MOSFET Features Advanced Process Technology l New Ultra Low On-Resistance l 175°C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l Lead-Free, RoHS pliant l Automotive Qualified - l Description 40V typ. 1.4mΩ (SMD version) max 1.8mΩ ID (Silicon Limited) 250A ID (Package Limited) VDSS RDS(on) c Applications l l Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional Features of this design are a 175°C junction operating temperature, fast...