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AUTOMOTIVE GRADE
AUIRFB8407 AUIRFS8407 AUIRFSL8407
HEXFET® Power MOSFET
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Features
Advanced Process Technology l New Ultra Low On-Resistance l 175°C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l Lead-Free, RoHS Compliant l Automotive Qualified *
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Description
40V typ. 1.4mΩ (SMD version) max 1.8mΩ ID (Silicon Limited) 250A ID (Package Limited)
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VDSS RDS(on)
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Applications
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Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating.
AUIRFB8407 Datasheet
