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AUIRFB8409 - HEXFET Power MOSFET

Description

Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area.

Features

  • l l l l l l l AUIRFB8409 AUIRFS8409 AUIRFSL8409 HEXFET® Power MOSFET D Advanced Process Technology New Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified.
  • G S VDSS 40V RDS(on) (SMD) typ. 0.97mΩ max. 1.2mΩ 409A ID (Silicon Limited) ID (Package Limited) 195A c.

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AUTOMOTIVE GRADE Features l l l l l l l AUIRFB8409 AUIRFS8409 AUIRFSL8409 HEXFET® Power MOSFET D Advanced Process Technology New Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified * G S VDSS 40V RDS(on) (SMD) typ. 0.97mΩ max. 1.2mΩ 409A ID (Silicon Limited) ID (Package Limited) 195A c Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating.
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