IRFH5010PbF VDS RDS(on) max (@VGS = 10V) Qg (typi.
IRFH5010PBF - HEXFET Power MOSFET
IRFH5010PbF VDS RDS(on) max (@VGS = 10V) Qg (typical) RG (typical) ID (@Tc(Bottom) = 25°C) 100 9.0 67 1.2 h100 V mΩ nC Ω A Applications • Secondar.IRFH5010PBF - HEXFET Power MOSFET
IRFH5010PbF VDS RDS(on) max (@VGS = 10V) Qg (typical) RG (typical) ID (@Tc(Bottom) = 25°C) 100 9.0 67 1.2 h100 V mΩ nC Ω A Applications • Secondar.