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IRFH5010PBF HEXFET Power MOSFET

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Description

IRFH5010PbF VDS RDS(on) max (@VGS = 10V) Qg (typical) RG (typical) ID (@Tc(Bottom) = 25°C) 100 9.0 67 1.2 h100 V mΩ nC Ω A Applications * .

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Features

* Features Low RDSon (< 9 mΩ) Low Thermal Resistance to PCB (

Applications

* Secondary Side Synchronous Rectification
* Inverters for DC Motors

IRFH5010PBF Distributors

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