| Image | Manufacturer | B2B MPN | Description | Distributor | Stock | Quantity | Price | Buy Now |
|---|---|---|---|---|---|---|---|---|
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Infineon Technologies AG | IRFH8307TRPBF | MOSFET N-CH 30V 42A/100A 8PQFN | DigiKey | 0 | 0 |
$0
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Download Datasheet (539.30 KB)
IRFH8307TRPbF
539.30 KB
Power mosfet.
StrongIRFET™ IRFH8307TRPbF
VDSS RDS(on) max (@ VGS = 10V) Qg (typical)
Rg (typical)
30 V
1.3 m.
50 nC 1.3
ID (@TC (Bottom) = 25°C)
100
A
Applications
*OR-ing MOSFET for 12V (typical) B.
📁 Related Datasheet
IRFH8307TRPBF - Power MOSFET
(International Rectifier)
VDSS RDS(on) max (@ VGS = 10V) Qg (typical)
Rg (typical)
30 V
1.3 m 50 nC 1.3
ID (@TC (Bottom) = 25°C)
100
A
Applications
OR-ing MOSF.
IRFH8303PBF - Power MOSFET
(International Rectifier)
VDSS RDS(on) max Qg (typical)
RG (typical)
ID (@TC (Bottom) = 25°C)
30 1.10 58 1.0
100
V m nC Ω
A
Applications Control MOSFET for synchronou.
IRFH8311PBF - HEXFET Power MOSFET
(International Rectifier)
IRFH8311PbF
VDS Vgs
max
30 ± 20 2.1 3.2 30 80
V V mΩ nC A
HEXFET® Power MOSFET
RDS(on) max
(@VGS = 10V) (@VGS = 4.5V)
Qg typ. ID
(@Tc(Bottom) = 2.
IRFH8311TRPBF - HEXFET Power MOSFET
(International Rectifier)
IRFH8311PbF
VDS Vgs
max
30 ± 20 2.1 3.2 30 80
V V mΩ nC A
HEXFET® Power MOSFET
RDS(on) max
(@VGS = 10V) (@VGS = 4.5V)
Qg typ. ID
(@Tc(Bottom) = 2.
IRFH8316PBF - HEXFET Power MOSFET
(International Rectifier)
IRFH8316PbF
VDS Vgs max RDS(on) max
(@VGS = 10V)
(@VGS = 4.5V)
Qg typ
ID
(@Tc(Bottom) = 25°C)
30 ± 20
2.95
4.30 30.0
50i
V V
mΩ
nC A
HEXFET® Power.
IRFH8316TRPBF - HEXFET Power MOSFET
(International Rectifier)
IRFH8316PbF
HEXFET® Power MOSFET
VDS Vgs max RDS(on) max
(@VGS = 10V) (@VGS = 4.5V)
30 ± 20 2.95 4.30 30.0 50
V V mΩ nC A
Qg typ ID
(@Tc(Bottom) = .
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