IRFH4201PbF
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Power mosfet.
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IRFH4201PbF - Power MOSFET
(International Rectifier)
IRFH4201PbF
HEXFET® Power MOSFET VDSS RDS(on) max (@ VGS = 10V) (@ VGS = 4.5V) Qg (typical) ID (@TC (Bottom) = 25°C) 25 0.95 1.25 46.0 100 nC A PQF.
IRFH4201 - Power MOSFET
(Infineon)
IRFH4201PbF
HEXFET® Power MOSFET
VDSS RDS(on) max (@ VGS = 10V) (@ VGS = 4.5V) Qg (typical)
ID (@TC (Bottom) = 25°C)
25 0.95 1.25 46.0
100
V m.
IRFH4209DPBF - Power MOSFET
(International Rectifier)
VDSS RDS(on) max (@ VGS = 10V) (@ VGS = 4.5V) Qg (typical)
ID (@TC (Bottom) = 25°C)
25 1.10 1.35 36
100
V m nC A
Applications Synchronous.
IRFH4210DPbF - Power MOSFET
(International Rectifier)
FastIRFET™ IRFH4210DPbF
HEXFET® Power MOSFET VDSS RDS(on) max (@ VGS = 10V) (@ VGS = 4.5V) Qg (typical) ID (@TC (Bottom) = 25°C) 25 1.10 1.35 37.0 10.
IRFH4210PbF - Power MOSFET
(International Rectifier)
FastIRFET™ IRFH4210PbF
HEXFET® Power MOSFET VDSS RDS(on) max (@ VGS = 10V) (@ VGS = 4.5V) Qg (typical) ID (@TC (Bottom) = 25°C) 25 1.10 1.35 245.
IRFH4213DPbF - Power MOSFET
(International Rectifier)
IRFH4213DPbF
HEXFET® Power MOSFET VDSS RDS(on) max (@ VGS = 10V) (@ VGS = 4.5V) Qg (typical) ID (@TC (Bottom) = 25°C) 25 1.35 1.90 25 100 nC A PQFN 5.
IRFH4213PbF - Power MOSFET
(International Rectifier)
FastIRFET™ IRFH4213PbF
HEXFET® Power MOSFET VDSS RDS(on) max (@ VGS = 10V) (@ VGS = 4.5V) Qg (typical) ID (@TC (Bottom) = 25°C) 25 1.35 1.90 26 204 .
IRFH4226PBF - Power MOSFET
(International Rectifier)
VDSS RDS(on) max (@ VGS = 10V) (@ VGS = 4.5V) Qg (typical)
ID (@TC (Bottom) = 25°C)
25 2.4 3.3 16
70
V m nC A
Applications
Control MOSFE.
IRFH4234PBF - Power MOSFET
(International Rectifier)
VDSS RDS(on) max (@ VGS = 10V) (@ VGS = 4.5V) Qg (typical)
ID (@TC (Bottom) = 25°C)
25 4.6 7.3 8.2
60
V m nC A
Applications
Control MOSFET.
IRFH4251DPbF - Power MOSFET
(International Rectifier)
VDSS RDS(on) max (@VGS = 4.5V) Qg (typical)
ID (@TC = 25°C)
Q1 25 4.60 10
45
Q2 25 1.10 44
45
V m nC A
Applications
Control and Synchronou.