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IRFH8307TRPBF Power MOSFET

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Description

VDSS RDS(on) max (@ VGS = 10V) Qg (typical) Rg (typical) 30 V 1.3 m 50 nC 1.3    ID (@TC (Bottom) = 25°C) 100 A Applications *OR-ing .
Dimension design to accommodate the component width Dimension design to accommodate the component lenght Dimension design to accommodate the component.

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Features

* Low RDSon (

Applications

* OR-ing MOSFET for 12V (typical) Bus in-Rush Current

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