IRFH8316TRPBF - HEXFET Power MOSFET
(International Rectifier)
IRFH8316PbF
HEXFET® Power MOSFET
VDS Vgs max RDS(on) max
(@VGS = 10V) (@VGS = 4.5V)
30 ± 20 2.95 4.30 30.0 50
V V mΩ nC A
Qg typ ID
(@Tc(Bottom) = .
IRFH8311PBF - HEXFET Power MOSFET
(International Rectifier)
IRFH8311PbF
VDS Vgs
max
30 ± 20 2.1 3.2 30 80
V V mΩ nC A
HEXFET® Power MOSFET
RDS(on) max
(@VGS = 10V) (@VGS = 4.5V)
Qg typ. ID
(@Tc(Bottom) = 2.
IRFH8311TRPBF - HEXFET Power MOSFET
(International Rectifier)
IRFH8311PbF
VDS Vgs
max
30 ± 20 2.1 3.2 30 80
V V mΩ nC A
HEXFET® Power MOSFET
RDS(on) max
(@VGS = 10V) (@VGS = 4.5V)
Qg typ. ID
(@Tc(Bottom) = 2.
IRFH8318PBF - HEXFET Power MOSFET
(International Rectifier)
IRFH8318PbF
HEXFET® Power MOSFET
VDS Vgs max RDS(on) max
(@VGS = 10V) (@VGS = 4.5V)
30 ± 20 3.1 4.6 19 50
V V mΩ nC A
Qg typ ID
(@Tc(Bottom) = 25°C.
IRFH8318TRPBF - HEXFET Power MOSFET
(International Rectifier)
IRFH8318PbF
HEXFET® Power MOSFET
VDS Vgs max RDS(on) max
(@VGS = 10V) (@VGS = 4.5V)
30 ± 20 3.1 4.6 19 50
V V mΩ nC A
Qg typ ID
(@Tc(Bottom) = 25°C.
IRFH8303PBF - Power MOSFET
(International Rectifier)
VDSS RDS(on) max Qg (typical)
RG (typical)
ID (@TC (Bottom) = 25°C)
30 1.10 58 1.0
100
V m nC Ω
A
Applications Control MOSFET for synchronou.