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IRFH5006PBF HEXFET Power MOSFET

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Description

IRFH5006PbF VDS RDS(on) max (@VGS = 10V) Qg (typical) RG (typical) ID (@Tmb = 25°C) 60 4.1 69 1.2 h100 V mΩ nC Ω A HEXFET® Power MOSFET PQFN 5X6 m.

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Features

* Features Low RDSon (≤ 4.1mΩ) Low Thermal Resistance to PCB (≤ 0.8°C/W) 100% Rg tested Low Profile (≤ 0.9 mm) Industry-Standard Pinout Compatible with Existing Surface Mount Techniques RoHS Compliant Containing no Lead, no Bromide and no Halogen MSL1, Industrial Qualification Benefits results in ⇒

Applications

* Secondary Side Synchronous Rectification
* Inverters for DC Motors
* DC-DC Brick Applications

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