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IRFH5020PBF HEXFET Power MOSFET

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Description

PD -97428 www.DataSheet4U.com IRFH5020PbF HEXFET® Power MOSFET VDS RDS(on) max (@VGS = 10V) 200 55 36 1.9 43 V m : Qg (typical) RG (typical) ID .

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Features

* Features Benefits Low RDSon Low Thermal Resistance to PCB (≤ 0.5°C/W) 100% Rg tested Low Profile (≤ 0.9 mm) Lower Conduction Losses Enable better thermal dissipation Increased Reliability results in Increased Power Density Industry-Standard Pinout ⇒ Multi-Vendor Compatibility Easier Manufacturing

Applications

* Secondary Side Synchronous Rectification
* Inverters for DC Motors
* DC-DC Brick Applications

IRFH5020PBF Distributors

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