Description
IRFH5025PbF HEXFET® Power MOSFET VDS RDS(on) max (@VGS = 10V) 250 100 37 1.6 25 V mΩ nC Ω A PQFN 5X6 mm Qg (typical) RG (typical) ID (@Tc(Bottom) =.
Features
* Features Benefits
Low RDSon Low Thermal Resistance to PCB (≤ 0.8°C/W) 100% Rg tested Low Profile (≤ 0.9 mm) Industry-Standard Pinout Compatible with Existing Surface Mount Techniques RoHS Compliant Containing no Lead, no Bromide and no Halogen MSL1, Industrial Qualification
results in
⇒
Lower Co
Applications
* Secondary Side Synchronous Rectification
* Inverters for DC Motors
* DC-DC Brick Applications
