IRFHM831PBF Datasheet | Specifications & PDF Download

IRFHM831PbF HEXFET® Power MOSFET VDS RDS(on) max (@VGS = 10V) Qg (typical) RG (typical) ID (@Tc(Bottom) = 25°C) 30 V 7.8 m: 7.3 nC 0.5 : 40h A PQFN

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