IRFHM830DPbF, International Rectifier
IRFHM830DPbF
HEXFET® Power MOSFET
VDS RDS(on) max
(@VGS = 10V)
30 4.3 13 1.1 40
V mΩ nC Ω A
3.3mm x 3.3mm PQFN
Qg (typical) RG (typical) ID
(@Tc(B.
IRFHM830DTRPbF, International Rectifier
IRFHM830DPbF
HEXFET® Power MOSFET
VDS RDS(on) max
(@VGS = 10V)
30 4.3 13 1.1 40
V mΩ nC Ω A
3.3mm x 3.3mm PQFN
Qg (typical) RG (typical) ID
(@Tc(B.
IRFHM8326PBF, International Rectifier
IRFHM8326PbF
VDSS VGS max RDS(on) max (@ VGS = 10V) (@ VGS = 4.5V) Qg (typical) ID (@TC (Bottom) = 25°C) 30 ±20 4.7 6.7 20 70 nC A V V m
D 5 D.
IRFHM8329PBF, International Rectifier
IRFHM8329PbF
VDSS VGS max RDS(on) max (@ VGS = 10V) (@ VGS = 4.5V) Qg (typical) ID (@TC (Bottom) = 25°C) 30 ±20 6.1 8.8 13 24 nC A V V m
D 5 D.
IRFHM8330PBF, International Rectifier
IRFHM8330PbF
VDSS VGS max RDS(on) max (@ VGS = 10V) (@ VGS = 4.5V) Qg (typical) ID (@TC (Bottom) = 25°C) 30 ±20 6.6 9.9 9.3 25 nC A V V m
D 5 .
IRFHM8334TRPBF, International Rectifier
VDS VGS max RDS(on) max
(@VGS = 10V) (@VGS = 4.5V)
Qg typ.
ID
(@Tc(Bottom) = 25°C)
30 ± 20
9.0
13.5 7.1
25h
V V
m:
nC A
Applications • Control MOSF.
IRFHM8337TRPBF, International Rectifier
IRFHM8337TRPbF
HEXFET® Power MOSFET VDSS RDS(on) max (@ VGS = 10V) (@ VGS = 4.5V) Qg (typical) ID (@TC = 25°C) 30 12.4 17.9 5.4 18 nC A V m
D 5.