IRFHM831PBF Datasheet - International Rectifier

IRFHM831PBF, HEXFET Power MOSFET

IRFHM831PbF HEXFET® Power MOSFET VDS RDS(on) max (@VGS = 10V) Qg (typical) RG (typical) ID (@Tc(Bottom) = 25°C) 30 V 7.8 m: 7.3 nC 0.5 : 40h A PQFN.

Datasheet Details

Part number:

IRFHM831PBF

Manufacturer:

International Rectifier

File Size:

257.49 KB

Description:

HEXFET Power MOSFET

Features

* Features Low Charge (typical 7.3nC) Low Thermal Resistance to PCB (

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