IRFHM830DPbF Datasheet - International Rectifier

IRFHM830DPbF, HEXFET Power MOSFET

IRFHM830DPbF HEXFET® Power MOSFET VDS RDS(on) max (@VGS = 10V) 30 4.3 13 1.1 40 V mΩ nC Ω A 3.3mm x 3.3mm PQFN Qg (typical) RG (typical) ID (@Tc(B.

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IRFHM830DPbF-InternationalRectifier.pdf

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Datasheet Details

Part number:

IRFHM830DPbF

Manufacturer:

International Rectifier

File Size:

259.45 KB

Description:

HEXFET Power MOSFET

Features

* Features Low RDSon (≤ 4.3mΩ ) Schottky intrinsic diode with low forward voltage Benefits Lower Conduction Losses Lower switching losses Low Thermal Resistance to PCB (

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IRFHM830DPbF HEXFET Power MOSFET International Rectifier

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