IRFI1310N Datasheet | Specifications & PDF Download

Isc N-Channel MOSFET Transistor INCHANGE Semiconductor IRFI1310N ·FEATURES ·With TO-220F package ·Low input capacitance and gate charge ·Low gate in

(9 views)

PD - 9.1611A PRELIMINARY Advanced Process Technology Isolated Package l High Voltage Isolation = 2.5KVRMS … l Sink to Lead Creepage Dist. = 4.8mm l F

(8 views)

 Advanced Process Technology  Isolated Package  High Voltage Isolation = 2.5KVRMS   Sink to Lead Creepage Dist. = 4.8mm  Fully Avalanche Rated 

(7 views)

l Advanced Process Technology l Isolated Package l High Voltage Isolation = 2.5KVRMS … l Sink to Lead Creepage Dist. = 4.8mm l Fully Avalanche Rated l

(5 views)