IRFI1310N Datasheet | Specifications & PDF Download

PD - 9.1611A PRELIMINARY Advanced Process Technology Isolated Package l High Voltage Isolation = 2.5KVRMS … l Sink to Lead Creepage Dist. = 4.8mm l F

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l Advanced Process Technology l Isolated Package l High Voltage Isolation = 2.5KVRMS … l Sink to Lead Creepage Dist. = 4.8mm l Fully Avalanche Rated l

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Isc N-Channel MOSFET Transistor INCHANGE Semiconductor IRFI1310N ·FEATURES ·With TO-220F package ·Low input capacitance and gate charge ·Low gate in

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 Advanced Process Technology  Isolated Package  High Voltage Isolation = 2.5KVRMS   Sink to Lead Creepage Dist. = 4.8mm  Fully Avalanche Rated 

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