IRFIBC20 Datasheet | Specifications & PDF Download

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iscN-Channel MOSFET Transistor IRFIBC20G ·FEATURES ·Low drain-source on-resistance: RDS(ON) = 4.4Ω (MAX) ·Enhancement mode: Vth = 2 to 4V (VDS = 10

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IRFIBC20G, SiHFIBC20G Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration 600 VGS = 1

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