IRFIBE30G Datasheet | Specifications & PDF Download

iscN-Channel MOSFET Transistor IRFIBE30G ·FEATURES ·Low drain-source on-resistance: RDS(ON) =3.0Ω (MAX) ·Enhancement mode: Vth = 2 to 4V (VDS = 10 V

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www.vishay.com IRFIBE30G Vishay Siliconix Power MOSFET D TO-220 FULLPAK G S GD S N-Channel MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg (Max.

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