IRFIZ34N Datasheet | Specifications & PDF Download

l Advanced Process Technology l Isolated Package l High Voltage Isolation = 2.5KVRMS … l Sink to Lead Creepage Dist. = 4.8mm l Fully Avalanche Rated l

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Isc N-Channel MOSFET Transistor ·FEATURES ·With TO-220F package ·Low input capacitance and gate charge ·Low gate input resistance ·Reduced switching a

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l Advanced Process Technology l Isolated Package l High Voltage Isolation = 2.5KVRMS … l Sink to Lead Creepage Dist. = 4.8mm l Fully Avalanche Rated

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AUTOMOTIVE GRADE PD - 97778 AUIRFIZ34N Features l l l l l l l l l Advanced Planar Technology Low On-Resistance Isolated Package High Voltage Isolat

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