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AUTOMOTIVE GRADE
PD - 97778
AUIRFIZ34N
Features
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Advanced Planar Technology Low On-Resistance Isolated Package High Voltage Isolation = 2.5KVRMS
Sink to Lead Creepage Distantce = 4.8mm 175°C Operating Temperature Fully Avalanche Rated Lead-Free, RoHS Compliant Automotive Qualified*
HEXFET® Power MOSFET
V(BR)DSS RDS(on) max. ID
55V 40m 21A
Description
Specifically designed for Automotive applications, this cellular design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area.
AUIRFIZ34N Datasheet
