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AUIRFI3205 - Power MOSFET

Description

Specifically designed for Automotive applications, this cellular design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area.

Features

  • Advanced Planar Technology Low On-Resistance Isolated Package High Voltage Isolation = 2.5KVRMS Sink to Lead Creepage Distance = 4.8mm 175°C Operating Temperature Fully Avalanche Rated Lead-Free, RoHS Compliant Automotive Qualified.
  • HEXFET® Power MOSFET V(BR)DSS RDS(on) max. ID 55V 0.008 64A.

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Full PDF Text Transcription

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AUTOMOTIVE GRADE PD - 97764 AUIRFI3205 Features ● ● ● ● ● ● ● ● ● Advanced Planar Technology Low On-Resistance Isolated Package High Voltage Isolation = 2.5KVRMS Sink to Lead Creepage Distance = 4.8mm 175°C Operating Temperature Fully Avalanche Rated Lead-Free, RoHS Compliant Automotive Qualified * HEXFET® Power MOSFET V(BR)DSS RDS(on) max. ID 55V 0.008 64A Description Specifically designed for Automotive applications, this cellular design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area.
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