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AUIRFI4905 - Power MOSFET

Description

Specifically designed for Automotive applications, this cellular design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area.

Features

  •  Advanced Planar Technology.
  •  P-Channel MOSFET.
  •  Low On-Resistance.
  •  Dynamic dV/dT Rating.
  •  175°C Operating Temperature.
  •  Fast Switching.
  •  Fully Avalanche Rated.
  •  Repetitive Avalanche Allowed up to Tjmax.
  •  Lead-Free, RoHS Compliant.
  •  Automotive Qualified.

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Full PDF Text Transcription

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  AUTOMOTIVE GRADE AUIRFI4905 HEXFET® Power MOSFET D Features  Advanced Planar Technology  P-Channel MOSFET  Low On-Resistance  Dynamic dV/dT Rating  175°C Operating Temperature  Fast Switching  Fully Avalanche Rated  Repetitive Avalanche Allowed up to Tjmax  Lead-Free, RoHS Compliant  Automotive Qualified * Description Specifically designed for Automotive applications, this cellular design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area. This benefit combined with the fast switching speed an ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in Automotive and a wide variety of other applications.
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