Datasheet Summary
AUTOMOTIVE GRADE
- 97767
Features l l l l l l l l l
Advanced Planar Technology Low On-Resistance Isolated Package High Voltage Isolation = 2.5KVRMS
Sink to Lead Creepage Distantce = 4.8mm 175°C Operating Temperature Fully Avalanche Rated Lead-Free, RoHS pliant Automotive Qualified-
HEXFET® Power MOSFET
V(BR)DSS RDS(on) max. ID 55V 24m 31A
Description
Specifically designed for Automotive applications, this cellular design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area. This benefit bined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for,...