IRFP140 Datasheet | Specifications & PDF Download

PD - 91343B IRFP140N HEXFET® Power MOSFET l l l l l Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Full

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INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification IRFP140R FEATURES ·Drain Current –ID= 31A@ TC=25℃ ·Drain Source Vol

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isc N-Channel MOSFET Transistor IRFP140N，IIRFP140N ·FEATURES ·Static drain-source on-resistance: RDS(on)≤52mΩ ·Enhancement mode: ·100% avalanche tes

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PD - 95810 AUTOMOTIVE MOSFET IRFP1405 HEXFET® Power MOSFET D Features ● ● ● ● ● Advanced Process Technology Ultra Low On-Resistance 175°C Operatin

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iscN-Channel MOSFET Transistor IRFP140 ·FEATURES ·Low drain-source on-resistance: RDS(ON) ≤77mΩ @VGS=10V ·Enhancement mode: Vth = 2.0 to 4.0V (VDS =

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Power MOSFET IRFP140, SiHFP140 Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration 100 VGS = 10 V

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isc N-Channel MOSFET Transistor IRFP1405，IIRFP1405 ·FEATURES ·Static drain-source on-resistance: RDS(on)≤5.3mΩ ·Enhancement mode: ·100% avalanche te

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PD - 95509A IRFP1405PbF Features l Advanced Process Technology l Ultra Low On-Resistance l 175°C Operating Temperature l Fast Switching l Repetitive

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IRFP140N TM Data Sheet March 2000 File Number 4841 33A, 100V, 0.040 Ohm, N-Channel Power MOSFET Packaging JEDEC TO-247 SOURCE DRAIN GATE Feature

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PD- 95711 IRFP140NPbF • Lead-Free www.irf.com 1 8/2/04 IRFP140NPbF 2 www.irf.com IRFP140NPbF www.irf.com 3 IRFP140NPbF 4 www.irf.com IRF

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Advanced Power MOSFET FEATURES Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Ope

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