Features Advanced Process Technology Dynam.
IRFP260M - N-Channel MOSFET
isc N-Channel MOSFET Transistor INCHANGE Semiconductor IRFP260M,IIRFP260M ·FEATURES ·Static drain-source on-resistance: RDS(on)≤40mΩ ·Enhancement mo.IRFP260MPBF - Power MOSFET
PD - 96293 IRFP260MPbF HEXFET® Power MOSFET l Advanced Process Technology l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l F.IRFP260M - IR MOSFET
Features Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Ease of Paralle.IRFP260MPbF - IR MOSFET
Features Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Ease of Paralle.