IRFP4768 Datasheet | Specifications & PDF Download

isc N-Channel MOSFET Transistor IRFP4768，IIRFP4768 ·FEATURES ·Static drain-source on-resistance: RDS(on)≤17.5mΩ ·Enhancement mode: ·100% avalanche t

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IRFP4768PbF VDSS RDS(on) typ. max ID 250V 14.5m 17.5m 93A Application ⚫ High Efficiency Synchronous Rectification in SMPS ⚫ Uninterruptible Power

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PD - 97379 IRFP4768PbF HEXFET® Power MOSFET Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Sp

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