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IRFP4768PbF

Power MOSFET

IRFP4768PbF Features

* se. 5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase during avalanche). 6. Iav = Allowable avalanche current. 7. ∆T = Allowable rise in junction temperature, not to exceed Tjmax (assumed as 25°C in Figure 14, 15). tav = Average time in avalanche. D = Duty cycle in avalanche

IRFP4768PbF Datasheet (326.48 KB)

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Datasheet Details

Part number:

IRFP4768PbF

Manufacturer:

International Rectifier

File Size:

326.48 KB

Description:

Power mosfet.
PD - 97379 IRFP4768PbF HEXFET® Power MOSFET Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Sp.

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IRFP4768PbF Power MOSFET International Rectifier

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