IRFP4768PbF Datasheet - International Rectifier

IRFP4768PbF Power MOSFET

PD - 97379 IRFP4768PbF HEXFET® Power MOSFET Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits Benefits l Improved Gate, Avalanche and Dynamic dV/dt Ruggedness l Fully Characterized Capacitance and Avalanche SOA l Enhanced body diode dV/dt and dI/dt Capability l Lead-Free D G S VDSS RDS(on) typ. max. ID 250V 14.5mΩ 17.5mΩ 93A D G D S TO-247AC G D S Gate Drain Sourc.

IRFP4768PbF Features

* se. 5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase during avalanche). 6. Iav = Allowable avalanche current. 7. ∆T = Allowable rise in junction temperature, not to exceed Tjmax (assumed as 25°C in Figure 14, 15). tav = Average time in avalanche. D = Duty cycle in avalanche

IRFP4768PbF Datasheet (326.48 KB)